The effect of Ge content on photovoltaic property of flexible Cu2ZnSn(S,Se)(4) thin film solar cells
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- 所属单位：材料科学与技术学院
- 发表刊物：APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- 关键字：PERFORMANCE
- 摘要：Magnetron co-sputtering method followed by selenization was used for the preparation of Cu2Zn(Sn,Ge)(S,Se)(4) (CZTGeSSe) thin film. The impact of Ge doping layer with different sputtering times on crystalline quality, surface roughness, band structure and device performance of CZTGeSSe absorber was systematically investigated. It was found that the increased Ge/(Ge+Sn) ratio could effectively promote the grain growth and improve the band mismatching of CZTGeSSe/CdS interface. The CZTGeSSe thin film with minimum roughness and increased CBO (-0.54 to -0.41eV) was obtained with the increased Ge/(Ge+Sn) ratio of 7.3%. However, oversized grain with rougher surface could result in a non-uniform coverage phenomenon of CdS layer, leading to severe interface recombination. After optimizing the Ge/(Ge+Sn) ratio, the best device performance with an efficiency of 3.19% was achieved in flexible CZTGeSSe thin film solar cells.
- ISSN号：0947-8396
- 是否译文：否
- 发表时间：2019-05-01
- 合写作者：Sun, Luanhong,黄护林
- 通讯作者：沈鸿烈
- 发表时间：2019-05-01
