Affiliation of Author(s):材料科学与技术学院

Journal:MATERIALS RESEARCH EXPRESS

Key Words:boron diffusion boron paper diffusion uniformity diffusion depth

Abstract:This paper presents a novel boron diffusion process using boron paper as the boron source to form a p(+) layer. It was found that sheet resistance was invariable with changing the distance between boron paper and Si wafers, and diffusion uniformity was the best at a distance of 0.3 cm. Sheet resistance (R-s) decreased with increasing diffusion temperature, showing a value of 6.9 Omega/rectangle at 1050 degrees C with a high diffusion uniformity of 99.173%. The junction depth increased from 195 nm to 517 nm with diffusion temperature raised from 900 degrees C to 1050 degrees C. The influence of diffusion time on the performance of B diffusion from boron paper was similar with that of temperature.

ISSN No.:2053-1591

Translation or Not:no

Date of Publication:2018-03-01

Co-author:杨汪扬,杨楠楠,金磊,倪志春

Correspondence Author:shl