Affiliation of Author(s):材料科学与技术学院

Journal:Cailiao Daobao/Mater. Rev.

Abstract:In order to improve the quality of B doped layer by diffusion, a novel boron source mixed with SiO2nanosphere was introduced. Scanning electronic microscopy, four probe method and minority carrier lifetime measurement were adopted to study the influence of SiO2nanosphere on the performance of p+layer formed by B diffusion from boric acid solution. It was found that the thickness of boron rich layer (BRL) decreased from 130 nm to 15 nm compared with that produced without addition of SiO2nanosphere. At the same time, the uniformity of diffusion increased from 88.17% to 96.79%. In addition, junction depth decreased slightly and minority carrier lifetime in the samples increased apparently after using mixed boric acid solution with SiO2nanosphere. All the results above indicated that SiO2nanosphere could evidently enhance the property of the p+layer formed by liquid B source diffusion from boric acid solution. © 2017, Materials Review Magazine. All right reserved.

ISSN No.:1005-023X

Translation or Not:no

Date of Publication:2017-06-25

Co-author:金磊,李金泽,吴文文,余双龙,杨艳

Correspondence Author:shl