点击次数：

所属单位：自动化学院

发表刊物：IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

关键字：Crosstalk suppression gate drivers magnetic coupling silicon carbide (SiC) MOSFETs

摘要：Silicon carbide (SiC) devices have attracted widespread attention because of their superior characteristics. However, not only the higher slew rate of drain-source voltage but also the higher slew rate of reverse recovery current can result in a more serious crosstalk problem than Si-based devices in a half-bridge application. Crosstalk suppression should be integrated into the gate driver to ensure the safe operation of SiC devices. Therefore, a specific mathematical analysis is done in this paper to figure out the crosstalk phenomenon. The limitations of the existing suppression methods are illustrated. Thus, a gate driver based on the magnetic coupling is proposed to ensure the gate-source voltage within the safe range, even when the positive and negative spurious pulse voltages appear. The proposed gate driver uses three ring transformers to insulate the control signal and driver power supply. So, it is feasible to drive a half-bridge circuit in the medium or high power applications. By saving optical couplers and isolated drive power supplies, the gate driver can realize fully galvanic isolation and generate the positive and negative gate-source driving voltage simply. The results derived from the proposed mathematical analysis and the effectiveness of the proposed driver in suppressing the spurious pulse voltage are verified by the experiments.

ISSN号：0278-0046

是否译文：否

发表时间：2017-11-01

合写作者：张斌锋,F70206578,钱强,张曌,徐坤山

通讯作者：F70206578,谢少军,许津铭