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所属单位：自动化学院

发表刊物：2017 IEEE 3RD INTERNATIONAL FUTURE ENERGY ELECTRONICS CONFERENCE AND ECCE ASIA (IFEEC 2017-ECCE ASIA)

关键字：SiC MOSFETs crosstalk suppression gate drivers magnetic coupling

摘要：Silicon carbide (SiC) devices attract widespread attention of scholars because of their superior characteristics. However, the interaction between the upper and lower devices during the switching process in the bridge circuit will affect the safe operation of SiC devices. To suppress the crosstalk spurious voltage, this paper proposes a gate driver circuit based on magnetic coupling for SiC devices to adjust the gate-source voltage to the safe range when the positive and negative spurious pulse voltages appear. Compared with the existent gate drivers for crosstalk suppression, the proposed circuit can realize fully galvanic isolation and generate the positive-negative gate-source voltage without auxiliary power supplies. As a result, the gate driver circuit is simplified and conducive to the integration. Based on the experimental results, the performance of the proposed circuit is evaluated.

是否译文：否

发表时间：2017-01-01

合写作者：张斌锋,F70206578,钱强,张曌,徐坤山

通讯作者：谢少军