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所属单位：自动化学院

发表刊物：2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC)

关键字：GaN HEMT multi-MHz high power density ZVS isolated converter

摘要：The eGaN HEMTs with ZVS technique have emerged in high frequency converters to reduce the switching loss. This paper investigates an eGaN HEMT ZVS isolated SEPIC converter running up to 2 MHz. Furthermore, an inductor optimization method is proposed to ensure ZVS and reduce reverse conduction loss of the SR. The efficiency curve is optimized based on the trade-off method between the switching and conduction losses. Moreover, the embedded inductor is proposed to reduce the conduction loss of the inductor. Finally, two 2 MHz eGaN HEMT prototypes with the commercial and embedded inductor with 18-36 V input and 5 V/2 A output are built respectively to verify the effectiveness of the proposed methods. The converters achieve a peak efficiency of over 88.2% and power density of 52.9 W/in(3), outperforming the state-of-art power module products.

ISSN号：1048-2334

是否译文：否

发表时间：2017-01-01

合写作者：徐志巍,许可,任小永

通讯作者：张之梁