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Affiliation of Author(s):材料科学与技术学院

Title of Paper:High-Temperature Oxidation of Double-Glow Plasma Tantalum Alloying on gamma-TiAl

Journal:OXIDATION OF METALS

Key Words:gamma-TiAl Double-glow plasma surface metallurgy technique Ta-modified layer High-temperature oxidation resistance

Abstract:A Ta-modified layer was prepared on gamma-TiAl by double-glow plasma surface metallurgy technique. Based on the results of high-temperature oxidation tests at 700, 800, and 900 degrees C, we studied the morphology, depth profile, and phase of gamma-TiAl and Ta-modified layer by scanning electron microscopy, energy spectrum analysis, and X-ray diffraction analysis. Results showed that the Ta-modified layer was tightly bonded to the substrate without voids and cracks, consisting of the alpha-Ta outer layer and inner diffusion layer. It was found that the isothermal oxidation kinetic curves of the TiAl with the Ta-modified layer followed the parabolic rate law. Ta element promoted the diffusion of Al and formation of uniformly mixed Al2O3/Ta2O5 films, which prevented the inward diffusion of oxygen and help to the improved high-temperature oxidation resistance.

ISSN No.:0030-770X

Translation or Not:no

Date of Publication:2019-10-01

Co-author:Zhang Pingze,Yan, Yuqin,Chen, Xiaohu,Li, Fengkun,wangshiyuan,Yao Zhengjun

Correspondence Author:Wei Dongbo