Influence of SiO2Nanosphere on the Performance of p+Layer Formed by B Diffusion from Boric Acid Solution
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- 所属单位：材料科学与技术学院
- 发表刊物：Cailiao Daobao/Mater. Rev.
- 摘要：In order to improve the quality of B doped layer by diffusion, a novel boron source mixed with SiO2nanosphere was introduced. Scanning electronic microscopy, four probe method and minority carrier lifetime measurement were adopted to study the influence of SiO2nanosphere on the performance of p+layer formed by B diffusion from boric acid solution. It was found that the thickness of boron rich layer (BRL) decreased from 130 nm to 15 nm compared with that produced without addition of SiO2nanosphere. At the same time, the uniformity of diffusion increased from 88.17% to 96.79%. In addition, junction depth decreased slightly and minority carrier lifetime in the samples increased apparently after using mixed boric acid solution with SiO2nanosphere. All the results above indicated that SiO2nanosphere could evidently enhance the property of the p+layer formed by liquid B source diffusion from boric acid solution. © 2017, Materials Review Magazine. All right reserved.
- ISSN号：1005-023X
- 是否译文：否
- 发表时间：2017-06-25
- 合写作者：金磊,李金泽,吴文文,余双龙,杨艳
- 通讯作者：沈鸿烈
- 发表时间：2017-06-25
