Performance of p(+) layer formed by B diffusion using boron paper
- 点击次数：
- 所属单位：材料科学与技术学院
- 发表刊物：MATERIALS RESEARCH EXPRESS
- 关键字：boron diffusion boron paper diffusion uniformity diffusion depth
- 摘要：This paper presents a novel boron diffusion process using boron paper as the boron source to form a p(+) layer. It was found that sheet resistance was invariable with changing the distance between boron paper and Si wafers, and diffusion uniformity was the best at a distance of 0.3 cm. Sheet resistance (R-s) decreased with increasing diffusion temperature, showing a value of 6.9 Omega/rectangle at 1050 degrees C with a high diffusion uniformity of 99.173%. The junction depth increased from 195 nm to 517 nm with diffusion temperature raised from 900 degrees C to 1050 degrees C. The influence of diffusion time on the performance of B diffusion from boron paper was similar with that of temperature.
- ISSN号：2053-1591
- 是否译文：否
- 发表时间：2018-03-01
- 合写作者：杨汪扬,杨楠楠,金磊,倪志春
- 通讯作者：沈鸿烈
- 发表时间：2018-03-01
