Influence of SiO2 nanosphere on the performance of n(+) layer fabricated by phosphorus diffusion using phosphoric acid solution
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- 所属单位：材料科学与技术学院
- 发表刊物：APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- 关键字：SOLAR-CELLS EMITTERS
- 摘要：Phosphorus diffusion was used widely in mass production of p-type silicon solar cells. In order to improve the quality of P doped layer fabricated, a novel phosphorus source mixing phosphoric acid with SiO2 nanosphere was introduced. A high diffusion uniformity of 94.9% was obtained when SiO2 nanosphere was introduced while the uniformity of sample diffused without SiO2 nanosphere was 84.49%. It was found that the formation of dead layer could be avoided by introducing the SiO2 nanosphere, as observed by SEM images, and the minority carrier lifetime of sample was enhanced by 27.87 mu s. The surface sheet resistance decreased from 132.62 to 12.8 / with the increase of temperature from 825 to 925 degrees C. Through an etching method, a variation of junction depth increasing from 300 to 571nm was found with increasing temperature. The variation trends of surface sheet resistance and junction depth with the increase of time were similar with that of temperature.
- ISSN号：0947-8396
- 是否译文：否
- 发表时间：2018-10-01
- 合写作者：杨汪扬,杨楠楠,金磊,倪志春
- 通讯作者：沈鸿烈
- 发表时间：2018-10-01
