Improved passivation effect in multicrystalline black silicon by chemical solution pre-treatment
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- 所属单位：材料科学与技术学院
- 发表刊物：APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- 关键字：SURFACE AL2O3 DEPOSITION
- 摘要：Though black silicon has excellent anti-reflectance property, its passivation is one of the main technical bottlenecks due to its large specific surface area. In this paper, multicrystalline black silicon is fabricated by metal assisted chemical etching, and is rebuilt in low concentration alkali solution. Different solution pre-treatment is followed to make surface modification on black silicon before Al2O3 passivation by atomic layer deposition. HNO3 and H2SO4+H2O2 solution pre-treatment makes the silicon surface become hydrophilic, with contact angle decrease from 117.28 degrees to about 30 degrees. It is demonstrated that when the pre-treatment solution is nitric acid, formed ultrathin SiOx layer between Al2O3 layer and black silicon is found to increase effective carrier lifetime to 72.64 mu s, which is obviously higher than that of the unpassivated black silicon. The passivation stacks of SiOx/Al2O3 are proved to be effective double layers for nanoscaled multicrystalline silicon surface.
- ISSN号：0947-8396
- 是否译文：否
- 发表时间：2018-04-01
- 合写作者：蒲天,郑超凡
- 通讯作者：沈鸿烈
- 发表时间：2018-04-01
