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Fast growth of conductive amorphous carbon films by HFCVD with filament temperature control
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Affiliation of Author(s):材料科学与技术学院

Journal:MATERIALS LETTERS

Key Words:Amorphous carbon films Chemical vapor deposition Filament temperature Electrical properties

Abstract:Amorphous carbon (a-C) films were synthesized on quartz substrates through a hot-filament chemical vapor deposition (HFCVD) method. Effect of filament temperature on the thickness, structural, morphological and electrical properties of a-C films was investigated. Both the crystalline quality and sp(2) content of a-C films increased by raising the filament temperature from 1800 degrees C to 2000 degrees C. Sharp increase of the surface roughness was observed as the filament temperature increased from 2000 degrees C to 2100 degrees C. The a-C films deposited at the filament temperature of 2000 degrees C with a high growth rate of 35 nm/min exhibited the optimal quality with a small roughness of 0.546 nm and a low resistivity of 1.67 x 10(-2) Omega.cm. These results indicated that HFCVD is a good method to prepare conductive a-C films rapidly and effectively. (C) 2018 Elsevier B.V. All rights reserved.

ISSN No.:0167-577X

Translation or Not:no

Date of Publication:2018-10-01

Co-author:翟子豪,陈洁仪

Correspondence Author:shl

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Researcher
Supervisor of Doctorate Candidates

Main positions:江苏省真空学会常务理事-江苏省光伏科学与工程协同创新中心副理事长-南京市可再生能源学会副理事长

Other Post:亚太材料科学院院士 (2013年10月)

Gender:Male

Alma Mater:中国科学院上海冶金研究所

Education Level:With Certificate of Graduation for Doctorate Study

Degree:Doctoral Degree in Science

School/Department:College of Material Science and Technology

Discipline:Material Science. Physics

Business Address:南京航空航天大学将军路校区西区材料学院大楼D10-B317

Contact Information:18913854729

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