Affiliation of Author(s):材料科学与技术学院

Journal:APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Key Words:SOLAR-CELLS EMITTERS

Abstract:Phosphorus diffusion was used widely in mass production of p-type silicon solar cells. In order to improve the quality of P doped layer fabricated, a novel phosphorus source mixing phosphoric acid with SiO2 nanosphere was introduced. A high diffusion uniformity of 94.9% was obtained when SiO2 nanosphere was introduced while the uniformity of sample diffused without SiO2 nanosphere was 84.49%. It was found that the formation of dead layer could be avoided by introducing the SiO2 nanosphere, as observed by SEM images, and the minority carrier lifetime of sample was enhanced by 27.87 mu s. The surface sheet resistance decreased from 132.62 to 12.8 / with the increase of temperature from 825 to 925 degrees C. Through an etching method, a variation of junction depth increasing from 300 to 571nm was found with increasing temperature. The variation trends of surface sheet resistance and junction depth with the increase of time were similar with that of temperature.

ISSN No.:0947-8396

Translation or Not:no

Date of Publication:2018-10-01

Co-author:杨汪扬,杨楠楠,金磊,倪志春

Correspondence Author:shl