Affiliation of Author(s):自动化学院
Journal:Diangong Jishu Xuebao
Abstract:Conditioning monitoring (CM) of power metal-oxide-semiconductor field-effect transistor (MOSFET) is of great significance to ensure the reliability of power electronic equipment. For a power MOSFET, the shift of the threshold voltage is an important precursor for the degradation of the gate oxide or the change of the junction temperature. In a conventional threshold voltage monitoring circuit, the gate-to-source voltage and the drain current need to be monitored simultaneously. When the current is monitored, the amplifier inside the measurement channel inside the measuring oscilloscope may be distorted if the range of the measurement channel is not set wide enough to measure the on-state current, resulting in failure to accurately monitor the instantaneous current of turning on. Therefore, it is hard to choose a satisfying current sensor. In this paper, a threshold voltage monitoring method with no need of the current sensor based on the parasitic inductance was proposed, which is simple realization and is of high precision. Finally, simulation and experimental results were given to verify the effectiveness of the proposed method. © 2018, Electrical Technology Press Co. Ltd. All right reserved.
ISSN No.:1000-6753
Translation or Not:no
Date of Publication:2018-08-10
Co-author:Ren, Lei
Correspondence Author:gcy
Date of Publication:2018-08-10