Laser-induced damage threshold in HfO2/SiO2 multilayer films irradiated by beta-ray
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所属单位：航天学院
发表刊物：CHINESE PHYSICS B
关键字：beta-ray irradiation HfO2/SiO2 multilayer film residual stress laser-induced damage threshold
摘要：Post processing can effectively improve the resistance to laser damage in multilayer films used in a high power laser system. In this work, HfO2/SiO2 multilayer films are prepared by e-beam evaporation and then beta-ray irradiation is employed as the post-processing method. The particle irradiation affects the laser induced damage threshold (LIDT), which includes defects, surface roughness, packing density and residual stress. The residual stress that is relaxed during irradiation changes from compressive stress into tensile stress. Our results indicate that appropriate tensile stress can improve LIDT remarkably. In view of the fact that LIDT rises from 8 J/cm(2) to 12 J/cm(2), i.e., 50% increase, after the film has been irradiated by 2.2x10(13)/cm(2 )beta-ray, the particle irradiation can be used as a controllable and desirable post-processing method to improve the resistance to laser induced damage.
ISSN号：1674-1056
是否译文：否
发表时间：2019-02-01
合写作者：Tian, Peng-Yu,Zhu, Mao-Dong,Qi, Hong-Ji,Fei, Tao,吕金鹏,Liu, Hui-Ping
通讯作者：方美华