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个人信息Personal Information
教授 博士生导师
招生学科专业：
化学 -- 【招收硕士研究生】 -- 材料科学与技术学院
材料科学与工程 -- 【招收博士、硕士研究生】 -- 材料科学与技术学院
机械 -- 【招收博士、硕士研究生】 -- 材料科学与技术学院
材料与化工 -- 【招收博士、硕士研究生】 -- 材料科学与技术学院
主要任职：面向苛刻环境的材料制备与防护技术工业和信息化部重点实验室主任
其他任职：江苏省金属学会副理事长，江苏省热处理及表面改性工程技术研究中心副主任，江苏省机械工程学会材料工程专业委员会副理事长，江苏省复合材料学会常务理事
毕业院校：南京航空航天大学
学历：南京航空航天大学
学位：工学博士学位
所在单位：材料科学与技术学院
办公地点：江宁校区东区D10-材料楼A511
联系方式：13951818597
电子邮箱：
Preparation and Properties of Sapphire by Edge-defined Film-fed Growth (EFG) Method with Different Growth Directions
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所属单位：材料科学与技术学院
发表刊物：J Wuhan Univ Technol Mater Sci Ed
摘要：Sapphire, belonging to hexagonal crystal system, is typically anisotropic which makes it direction-sensitive. To research the effects of growth directions on properties of sapphire, c-[0001] seed (c-sapphire) and a-[11-20] seed (a-sapphire) were used to prepare sapphire by edge-defined film-fed growth (EFG) method. The samples were analyzed through lattice integrity, dislocation and corrosion performance by double-crystal XRD, OM, AFM, SEM and EDX. It was shown that the lattice integrities of two growth-direction crystals were both well due to the small FWHM values. While the average densities of dislocation in c-sapphire and a-sapphire were 9.2×103 and 3.9×103 cm-2 respectively, the energy of dislocation in c-sapphire was lower than that in a-sapphire. During Strong Phosphoric Acid (SPA) etching, the surface of c-sapphire basically kept smooth but in a-sapphire there were many point-like corrosion pits where aluminum and oxygen atoms lost by 2:1. Our work means that it will be promising for growing c-[0001] seed sapphire by EFG if aided by parameter optimization. © 2018, Wuhan University of Technology and Springer-Verlag GmbH Germany, part of Springer Nature.
ISSN号：1000-2413
是否译文：否
发表时间：2018-10-01
合写作者：Xu, Shangjun,Pei, Guangqing,Luo, Xixi,Wu, Xiaofeng,Lin, Yuhua
通讯作者：姚正军