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吴比 副研究员

入选 2025 年江苏省“青蓝工程”优秀青年骨干教师。近 5 年,主持国家自然科学基金重点项目课题、国家/江苏省自然科学基金青年基金等科研项目 10 余项。在IEEE TCAS-I、TC、TR、TCAD、DAC、ICCAD等集成电路设计权威期刊和会议上发表科研论文 60 余篇(其中第一作者及通讯发表论文 20 余篇)。担任IEEE TCAS-I, IEEE TCAS-II, IEEE TC, TCAD与DAC, DATE等领域内权威期刊和会议的审稿人。主要从事新型存储器件、电路及系统架构研究,对于非易失性高速缓冲存储器电路及系统设计、基于新型存储器件的存内逻辑计算有深入研究。

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Design and Optimization of an Area-efficient SOT-MRAM

发布时间: 2022-11-30 点击次数:

  • 发表刊物:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
  • 刊物所在地:Xi'an, China
  • 摘要:Spin orbit torque magnetic random access memory (SOT-MRAM) has attracted numerous research interests since it promises to overcome the write speed and energy bottlenecks of the conventional STT-MRAM. However, the cell density of SOT-MRAM is constrained due to more access transistors. In this work, we present a NAND-Like architecture for SOT-MRAM with a single transistor and several diodes, as well as a novel adaptive array design based on the proposed cell structure. Compared with the standard SOTMRAM, the proposed SOT-MRAM achieves significant improvement in the cell density by sharing transistors, meanwhile attains a comparable write speed. The overhead of write energy can be compensated by a well-designed write policy.
  • 论文类型:论文集
  • 论文编号:978-1-7281-0286-3
  • 学科门类:工学
  • 一级学科:电子科学与技术
  • 文献类型:C
  • 是否译文:
  • 收录刊物:EI
  • 发表时间:2019-07-08