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发表刊物：IEEE Transactions on Circuits and Systems I: Regular Papers
摘要：With downscaling of process technology, conventional memories encounter challenges, such as soaring static power, low reliability, and charge sharing effect induced by radiation effects. Magnetic random access memory (MRAM) is considered as an outstanding candidate for addressing these challenges. In particular, emerging spin-orbit torque (SOT) MRAMs have shown ultra-fast switching and read-disturbance immunity compared with spin-transfer torque MRAMs. However, the write operation of the SOT-MRAM is more vulnerable to single-event upsets (SEUs) as its ultra-short write pulse is comparable to the radiation current pulse. In addition, its read circuit can also be disturbed by SEUs or even double-node upsets (DNUs) induced by the charge sharing effect. In this paper, we investigate radiation effects on read/write circuits of the SOT-MRAM. Then, we propose novel radiation hardening designs for SOT-MRAM. The hardening technique is first studied at the write circuit by adding six PMOS transi
论文类型：期刊论文
学科门类：工学
一级学科：电子科学与技术
卷号：66
期号：5
页面范围：1853 - 1862
ISSN号：1558-0806
是否译文：否
发表时间：2019-03-06
收录刊物：SSCI、SCIE