Design of a 20MHz eGaN FET-Based Isolated Class e DC-DC Converter
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所属单位：自动化学院
发表刊物：Workshop Wide Bandgap Power Devices Appl. Asia, WiPDA Asia
摘要：Isolated Class E DC-DC converter is widely adopted in multi-MHz switching frequency applications since it could easily achieve zero voltage switching (ZVS) and has simple topology. However, the parameters design for the converter is difficult due to its complex resonance operation. This paper proposes a direct design method for isolated Class E DC-DC converter with On-Off control. In the proposed design approach, the rectifier network, which could be equivalent to a pure resistor, is firstly designed by time-simulation method. Afterwards, three constraints are considered for designing the parameters of the Class E inverter, including the realization of the zero voltage switching, the demand of rated output capacity and the sinusoidal degree of the resonant current. In addition, the duty cycle of the power switch is also optimized selected to achieve high efficiency. Finally, a 20 MHz 12 V/24 W prototype converter is implemented using the emerging enhancement-mode Gallium Nitride Field Effect Tube (eGaN FET) and experimental results validate the effectiveness of the proposed design approach. © 2018 IEEE.
是否译文：否
发表时间：2018-05-01
合写作者：Dai, Jiandong,阮新波
通讯作者：汪丽影