一种STT-MRAM相关电路的磁性工艺设计方法
- Type of Patent:Invent
- State of Patent:Authorized patents
- Application Number:ZL 2021 1 0295434.9
- Authorization number:CN 113515913 B
- Service Invention or Not:no
- Document Type:DOCUMENTTYPE_ID139324
- Application Date:2021-03-19
- Authorization Date:2023-10-24
Attachments:
Pre One:
面向SOT-MRAM相关电路的自旋电子工艺设计系统
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基于STT-MRAM的可重构物理不可克隆函数的生成方法及装置