A High Speed and High Yield Path Switching Sensing Circuit for STT-MRAM
- DOI number:10.1109/TMAG.2024.3491573
- Affiliation of Author(s):南京航空航天大学
- Journal:IEEE Trans. on Magnetics
- Indexed by:Journal paper
- Discipline:Engineering
- Document Type:J
- Volume:61
- Issue:1
- Page Number:3400206
- Translation or Not:no
- Included Journals:SCI
- Date of Publication:2025-01-01