Residual stress regulation for CZTSSe thin film on flexible titanium substrate by introducing a Ge transition layer
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- 所属单位：材料科学与技术学院
- 发表刊物：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- 关键字：SOLAR-CELLS RAMAN-SCATTERING PERFORMANCE FABRICATION GROWTH SELENIZATION EFFICIENCY MECHANISM
- 摘要：In this paper, a sputtered Ge transition layer between Mo and flexible titanium substrate was used to regulate the residual stress of Cu2ZnSn(S,Se)(4) (CZTSSe) thin film. 15nm thick Ge transition layer was proved to be the optimum thickness. A clear residual stress reduction from 3.26 to 0.57GPa occurred after adding the optimized transition layer, which could be largely attributed to the relieved mismatch of Mo and titanium substrate. It was also found that the transition Ge layer about 15nm could effectively enhance the crystal quality, grain size and compactness of CZTSSe thin film. However, further increased thickness beyond 15nm was detrimental for solar cell application due to the increased residual stress. X-ray photoelectron spectroscopy revealed the transition layer did not diffuse into CZTSSe absorber during selenization process. The tape test revealed that 96.7% area of the film were still remained for the optimized CZTSSe thin film. After 100 bending tests, the cell attenuation with 15nm Ge transition layer was 51% less than that without Ge transition layer.
- ISSN号：0957-4522
- 是否译文：否
- 发表时间：2019-04-01
- 合写作者：Sun, Luanhong,黄护林,Yang, Jiale,Li, Yanqi
- 通讯作者：沈鸿烈
- 发表时间：2019-04-01
