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所属单位：自动化学院
发表刊物：PROCEEDINGS OF THE 2017 12TH IEEE CONFERENCE ON INDUSTRIAL ELECTRONICS AND APPLICATIONS (ICIEA)
关键字：Silicon Carbide MOSFET Short-circuit Characteristics Short-circuit Protection
摘要：The short-circuit capability of power devices is one of the key issues that related to the reliability and safety of Silicon Carbide (SiC) power devices. Firstly, two types of short-circuit faults are introduced, and mechanism of short-circuit current is analyzed in detail. Then, the influence of different circuit parameters on characteristics of SiC MOSFET under short-circuit condition is analyzed and compared. The key factors influencing the short-circuit characteristics are further revealed, providing a guidance for designing short-circuit protection circuit of SiC MOSFET to some extent.
ISSN号：2156-2318
是否译文：否
发表时间：2017-01-01
合写作者：Dong, Yaowen,Xu, Kefeng,徐华娟,付大丰,王世山,Zhao, Chaohui
通讯作者：秦海鸿