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所属单位：自动化学院
发表刊物：PCIM Eur. Conf. Proc.
摘要：Compared to silicon devices, Silicon carbide devices have lower on-state resistance, which can reduce on-state loss of DC solid state circuit breaker and reduce the pressure of cooling. However, silicon carbide MOSFET has smaller die area, higher current density than silicon MOSFET, which leads to weaker short-circuit ability, shorter short-circuit withstand time and higher protection requirement. In order to ensure the safe and reliable operation of silicon carbide power devices and improve the reliability of silicon carbide based DC solid state circuit breakers, the short circuit capability of silicon and silicon carbide MOSFET is analyzed and compared. And the short-circuit fault mechanism is revealed. In addition, gate-source voltage clamp methods are elaborated and compared. Combined with desaturation detection, a "soft turn-off" short-circuit protection method based on source parasitic inductance is proposed. Finally, a DC solid state circuit breaker prototype is built for experimental verification. Experimental results show that the proposed method can not only reduce the voltage stress of the power device, but also suppress the short circuit current. © VDE VERLAG GMBH · Berlin · Offenbach.
是否译文：否
发表时间：2018-01-01
合写作者：张颖,Dong, Yaowen,Xu, Kefeng,Zhao, Chaohui,王世山
通讯作者：秦海鸿