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所属单位：自动化学院
发表刊物：PROCEEDINGS OF THE 2017 12TH IEEE CONFERENCE ON INDUSTRIAL ELECTRONICS AND APPLICATIONS (ICIEA)
关键字：Silicon carbide MOSFET gate driver cross-talk
摘要：Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have started gaining significant importance in various application areas of power electronics. During the last decade, SiC MOSFETs count not only as potential, but more importantly as alternative to silicon counterparts for high efficiency, high switching frequencies and high temperatures applications. Various SiC MOSFET driver designs have been proposed and their advantages and disadvantages are discussed as well. However, the design of gate drivers for SiC MOSFETs is very challenging. In particular, a sophisticated driver design is not only associated with properly switching the MOSFETs and decreasing the switching power losses, but also it must comply with the electromagnetic compatibility. This paper shows an overview of gate drivers for SiC MOSFETs. In particular, the basic operating principle of each driver along with their applicability and drawbacks are presented.
ISSN号：2156-2318
是否译文：否
发表时间：2017-01-01
合写作者：Ma Ceyu,F70206579,Xie Haotian,Zhu Ziyue,Xu Kefeng,王世山
通讯作者：秦海鸿