Affiliation of Author(s):自动化学院
Journal:PROCEEDINGS OF THE 2017 12TH IEEE CONFERENCE ON INDUSTRIAL ELECTRONICS AND APPLICATIONS (ICIEA)
Key Words:Silicon Carbide MOSFET Short-circuit Characteristics Short-circuit Protection
Abstract:The short-circuit capability of power devices is one of the key issues that related to the reliability and safety of Silicon Carbide (SiC) power devices. Firstly, two types of short-circuit faults are introduced, and mechanism of short-circuit current is analyzed in detail. Then, the influence of different circuit parameters on characteristics of SiC MOSFET under short-circuit condition is analyzed and compared. The key factors influencing the short-circuit characteristics are further revealed, providing a guidance for designing short-circuit protection circuit of SiC MOSFET to some extent.
ISSN No.:2156-2318
Translation or Not:no
Date of Publication:2017-01-01
Co-author:Dong, Yaowen,Xu, Kefeng,xhj,fdf,Wang Shishan,Zhao, Chaohui
Correspondence Author:Haihong Qin