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Analysis the Reverse Conduction Characteristic and Influence of Anti-parallel SiC SBD of eGaN HEMT

Date of Publication:2019-08-01 Hits:

Affiliation of Author(s):自动化学院
Journal:International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
Translation or Not:no
Date of Publication:2019-08-01
Co-author:彭子和
Correspondence Author:Haihong Qin

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Analysis the Reverse Conduction Characteristic and Influence of Anti-parallel SiC SBD of eGaN HEMT