Affiliation of Author(s):自动化学院
Journal:PROCEEDINGS OF THE 2017 12TH IEEE CONFERENCE ON INDUSTRIAL ELECTRONICS AND APPLICATIONS (ICIEA)
Key Words:Silicon carbide MOSFET Parallel Circuit Mismatch
Abstract:Current sharing is a major problem for paralleling devices, which can affect the performance and reliability of devices. In this paper, the factors leading to current unbalance in paralleling silicon carbide (SiC) MOSFETs are analyzed, especially the circuit mismatch. A double pulse test circuit based on SiC MOSFET is established for testing the circuit mismatch including common source stray inductance (L-S), switching loop stray inductance (L-D) and the gate driver resistance (R-G). The experimental results verify the influences caused by circuit mismatch on the current sharing in paralleling devices.
ISSN No.:2156-2318
Translation or Not:no
Date of Publication:2017-01-01
Co-author:Zhang Ying,Zhu Ziyue,F70206579,fdf,Wang Shishan,Zhao Chaohui
Correspondence Author:Haihong Qin