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所属单位：自动化学院

发表刊物：Diangong Jishu Xuebao

摘要：Conditioning monitoring (CM) of power metal-oxide-semiconductor field-effect transistor (MOSFET) is of great significance to ensure the reliability of power electronic equipment. For a power MOSFET, the shift of the threshold voltage is an important precursor for the degradation of the gate oxide or the change of the junction temperature. In a conventional threshold voltage monitoring circuit, the gate-to-source voltage and the drain current need to be monitored simultaneously. When the current is monitored, the amplifier inside the measurement channel inside the measuring oscilloscope may be distorted if the range of the measurement channel is not set wide enough to measure the on-state current, resulting in failure to accurately monitor the instantaneous current of turning on. Therefore, it is hard to choose a satisfying current sensor. In this paper, a threshold voltage monitoring method with no need of the current sensor based on the parasitic inductance was proposed, which is simple realization and is of high precision. Finally, simulation and experimental results were given to verify the effectiveness of the proposed method. © 2018, Electrical Technology Press Co. Ltd. All right reserved.

ISSN号：1000-6753

是否译文：否

发表时间：2018-08-10

合写作者：Ren, Lei

通讯作者：龚春英