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DOI number:10.1088/1361-6463/ab36d9

Affiliation of Author(s):物理学院

Title of Paper:Valley and spin polarized quantum transport in an irradiated silicene junction

Journal:J. Phys. D: Appl. Phys.

Key Words:valley polarization spin polarization floquet theory silicene

Abstract:Spin and valley dependent transport properties through a two-dimensional silicene junction irradiated by a monochromatic circularly polarized light are investigated within the framework of Floquet scattering matrix. The light irradiation generates gaps in dispersion and results in selective suppression in ballistic conductance. Spin and valley polarized transmission can be achieved by tuning the driving strength of irradiation. Spin and valley polarization of conductance exhibits specific symmetry with respect to site potential, which is conveniently tuned by an external field. The controllable spin and valley polarization obtained here suggests the silicene junction ideal for future spintronics and valleytronics applications.

Indexed by:Journal paper

Document Code:JPD 52 445302

Discipline:Natural Science

Document Type:J

Volume:52

Issue:JPD 52 445302

Page Number:445302

ISSN No.:0022-3727

Translation or Not:no

Date of Publication:2019-10-30

Included Journals:SCIE

Co-author:nzp