Magnetization distribution and spin transport of graphene/h-BN/graphene nanoribbon-based magnetic tunnel junction

发布时间： 2018-11-13 点击次数：

• 所属单位：理学院
• 发表刊物：PHYSICS LETTERS A
• 关键字：Graphene nanoribbon Magnetic tunnel junction Density functional theory Non-equilibrium Green's function
• 摘要：Motivated by recent electronic transport measurement of boron nitride-graphene hybrid atomic layers, we studied magnetization distribution, transmission and current-bias relation of graphene/h-BN/graphene (C/BN/C) nanoribbon-based magnetic tunnel junctions (MTJ) based on density functional theory and non-equilibrium Green's function methods. Three types of MTJs, i.e. asymmetric, symmetric (S) and symmetric (SS), and two types of lead magnetization alignment, i.e. parallel (PC) and antiparallel (APC), are considered. The results show that the magnetization distribution is closely related to the interface structure. Especially for asymmetric MTJ, the BAN atoms at the C/BN interface are spin-polarized and give finite magnetic moments. More interesting, it is found that the APC transmission of asymmetric MTJ with the thinnest barrier dominates over the PC one. By analyzing the projected density of states, one finds that the unusual higher APC transmission than PC is due to the coupling of electronic states of left ZGNR and right ZGNR. By integrating transmission, we calculate the current-bias voltage relation and find that the APC current is larger than PC current at small bias voltage and therefore reproduces a negative tunnel magnetoresistance. The results reported here will be useful and important for the design of C/BN/C-based MTJ. (C) 2017 Elsevier B.V. All rights reserved.
• ISSN号：0375-9601
• 是否译文：否
• 合写作者：颜晓红,郭艳东,肖杨
• 通讯作者：颜晓红,肖杨,张影
• 发表时间：2017-09-18