标题：
Effect of light intensity uniformity on the photoelectric conversion efficiency of GaAs cells
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所属单位：
理学院
发表刊物：
Hongwai yu Jiguang Gongcheng Infrared Laser Eng.
摘要：
In order to study the effect of light intensity uniformity on the conversion efficiency of GaAs cells, based on the working principle of single junction GaAs cell, the photoelectric conversion efficiency of GaAs cells was analyzed when the laser intensity was different by using the equivalent circuit, and the conversion efficiency of GaAs cells in different light intensity uniformity was studied by experiments. Results show that the light intensity uniformity has a great influence on the photoelectric conversion efficiency of the single junction GaAs cell. In some extreme conditions, it may cause the hot spot effect and completely destroy the GaAs cells. © 2017, Editorial Board of Journal of Infrared and Laser Engineering. All right reserved.
ISSN号：
1007-2276
是否译文：
否
发表时间：
2017-06-25
合写作者：
Wu, Zhengnan,Xie, Jiangrong
通讯作者：
Wu, Zhengnan,杨雁南,杨雁南
发表时间：
2017-06-25
学位：工学博士学位
职称：教授
所在单位：理学院