Turn-off analysis of FS-IGBTs based on a simplified analytical model
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所属单位：自动化学院
发表刊物：IET POWER ELECTRONICS
关键字：insulated gate bipolar transistors transient analysis semiconductor device models carrier density carrier lifetime equivalent circuits turn-off transient analysis FS-IGBTs simplified analytical model insulated gate bipolar transistors field-stop IGBT voltage field-stop IGBT current redistribution current combination current carrier density depletion boundary carrier lifetime equivalent circuit Matlab double-pulse testing platform
摘要：Normally for IGBTs five stages can be identified during Turn-Off transient, among which stage 3 and 4 are most complicated and time consuming in calculation, due to its intrinsically complicated physics process. In this paper, through extensive experiments, we found an interesting phenomenon that in stage 3 the slope of the driving gate voltage is linearly related to the FS-IGBT voltage and current, which greatly simplifies modeling and calculation. In stage 4, we further simplify the model by assuming (i) no interactive effects between the redistribution current and combination current; (ii) the base excess carrier density at depletion boundary far less than that at FSL boundary; (iii) The total charge in the base only relating to carrier life time. With these simplifications, equivalent circuit for each stage with less calculation efforts is developed, and the running time of the simulation under Matlab is less than one second. A double-pulse testing platform was built. The experimental results for both test beds with single IGBT and two IGBTs in series connection match the proposed model developed in Matlab pretty well, under quite different operating conditions, with the maximum error on both I-L-E-off and V-DC-E-off<17%.
ISSN号：1755-4535
是否译文：否
发表时间：2017-12-15
合写作者：Ding, Shun,吴红飞,胡海兵,汪俊
通讯作者：邢岩,胡海兵