Affiliation of Author(s):自动化学院
Journal:2017 IEEE 3RD INTERNATIONAL FUTURE ENERGY ELECTRONICS CONFERENCE AND ECCE ASIA (IFEEC 2017-ECCE ASIA)
Key Words:SiC MOSFETs crosstalk suppression gate drivers magnetic coupling
Abstract:Silicon carbide (SiC) devices attract widespread attention of scholars because of their superior characteristics. However, the interaction between the upper and lower devices during the switching process in the bridge circuit will affect the safe operation of SiC devices. To suppress the crosstalk spurious voltage, this paper proposes a gate driver circuit based on magnetic coupling for SiC devices to adjust the gate-source voltage to the safe range when the positive and negative spurious pulse voltages appear. Compared with the existent gate drivers for crosstalk suppression, the proposed circuit can realize fully galvanic isolation and generate the positive-negative gate-source voltage without auxiliary power supplies. As a result, the gate driver circuit is simplified and conducive to the integration. Based on the experimental results, the performance of the proposed circuit is evaluated.
Translation or Not:no
Date of Publication:2017-01-01
Co-author:张斌锋,F70206578,钱强,张曌,徐坤山
Correspondence Author:xsj
Date of Publication:2017-01-01