High-Performance in-memory Logic Scheme using Unipolar Switching SOT-MRAM
- 发表刊物:IEEE 22nd International Conference on Nanotechnology (NANO)
- 刊物所在地:Palma de Mallorca, Spain
- 论文类型:论文集
- 论文编号:978-1-6654-5225-0
- 文献类型:C
- ISSN号:1944-9399
- 是否译文:否
- 收录刊物:EI
- 发表时间:2022-11-08