Design and Optimization of an Area-efficient SOT-MRAM
发布时间：2022-11-30点击次数：
- 发表刊物：IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
- 刊物所在地：Xi'an, China
- 摘要：Spin orbit torque magnetic random access memory (SOT-MRAM) has attracted numerous research interests since it promises to overcome the write speed and energy bottlenecks of the conventional STT-MRAM. However, the cell density of SOT-MRAM is constrained due to more access transistors. In this work, we present a NAND-Like architecture for SOT-MRAM with a single transistor and several diodes, as well as a novel adaptive array design based on the proposed cell structure. Compared with the standard SOTMRAM, the proposed SOT-MRAM achieves significant improvement in the cell density by sharing transistors, meanwhile attains a comparable write speed. The overhead of write energy can be compensated by a well-designed write policy.
- 论文类型：论文集
- 论文编号：978-1-7281-0286-3
- 学科门类：工学
- 一级学科：电子科学与技术
- 文献类型：C
- 是否译文：否
- 发表时间：2019-07-08
- 收录刊物：EI