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所属单位：航空学院
发表刊物：JOURNAL OF ALLOYS AND COMPOUNDS
关键字：Ultrathin c-Si solar cells Photovoltaic devices TiO2 electron transporting layer Inverted nanopyramids texturing Light management
摘要：Ultrathin c-Si solar cells with light trapping nanostructures attract tremendous research interest for their flexibility and high specific power density. However, the performance of the ultrathin c-Si solar cell is limited by a big light absorption loss due to the reduced thickness. Here, we report a novel ultrathin c-Si solar cell through the direct deposition of TiO2 electron transporting layer and indium tin oxide (ITO) electrode modified with ultrathin low workfunction (WF) metal subsequently onto random inverted nanopyramids (INPs) texture. The random INPs are fabricated through the well-known two-step Ag assisted chemical etching method followed by a post nanostructure rebuilding process. The TiO2 thickness, deposition temperature and metal layer thickness are changed to optimize cell performance. With the optimized parameters, a high short-current density (Jsc) (30.66 mA/cm(2)) and energy-conversion efficiency (11.36%) are achieved on random INPs based 45 mu m ultrathin c-Si solar cell by choosing 2 nmMg layer as the modifying ultrathin metal layer, which are 37.65% and 36.4% respectively higher than that in planar one. All the findings not only offer additional insight into the mechanism of TiO2 electron transporting layer based ultrathin c-Si solar cell but also introduce a promising new approach for next-generation cost effective flexible photovoltaics. (C) 2018 Elsevier B.V. All rights reserved.
ISSN号：0925-8388
是否译文：否
发表时间：2018-11-15
合写作者：沈鸿烈,姚函妤,高凯,蒋晔,刘友文
通讯作者：沈鸿烈,唐群涛