Direct growth of nitrogen-doped graphene films on glass by plasma-assisted hot filament CVD for enhanced electricity generation
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- 所属单位：材料科学与技术学院
- 发表刊物：J. Mater. Chem. A
- 摘要：Nitrogen (N) doping is an efficient way to modulate the properties of graphene. The reported chemical vapor deposition (CVD) processes for synthesizing N-doped graphene mostly involve a metal catalyst and ammonia (NH3) dopant. However, the inevitable metal residual and toxicity of NH3 would significantly hinder its practical applications. In this paper, for the first time, metal-free synthesis of N-doped graphene films on glass was achieved through a plasma-assisted hot filament CVD method using eco-friendly N2 gas as the dopant. Both the hot filament and plasma source were proven to be essential for growing N-doped graphene of preferable quality. By adjusting the N2 flow, the N content, transmittance and electrical properties of graphene films could be facilely modulated. Furthermore, it was demonstrated that the electrical voltage induced by dropping ion droplets on graphene glass was significantly improved from 50 mV to 320 mV through N doping, exceeding those of reported graphene based electricity generators. This improvement was attributed to the higher surface potential of N-doped graphene glass compared to the pristine ones, as revealed by Kelvin probe force microscopy. The present work provides a promising strategy for direct synthesis and expands applications of N-doped graphene glass for high-efficiency energy harvesting. © The Royal Society of Chemistry.
- ISSN号：2050-7488
- 是否译文：否
- 发表时间：2019-01-01
- 合写作者：Zhai, Zihao,Chen, Jieyi,F70206594,Jiang, Ye
- 通讯作者：沈鸿烈
- 发表时间：2019-01-01
