Fabrication of Cu2ZnSnS4 thin films by simple solution method using citric acid as complexing agent
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- 所属单位：材料科学与技术学院
- 发表刊物：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- 关键字：IONIC LAYER ADSORPTION SOLAR-CELL SULFURIZATION TEMPERATURE PRECURSORS
- 摘要：Cu2ZnSnS4 (CZTS) films were prepared by sulfurizing Cu-Zn-Sn precursor deposited via a simple solution method using environment-friendly citric acid as complexing agent. A single Cu2ZnSnS4 thin film was obtained at 500 A degrees C under a mixed N-2 + H2S (5%) atmosphere. The effects of sulfurization temperature on structural, morphological and optical properties were studied. The results showed that the CZTS thin film annealed at 500 A degrees C exhibited large agglomeration of grains, ideal band gap (E (g) = 1.49 eV) and high optical absorption coefficient (> 10(4) cm(-1)). The resulted carrier concentration and mobility were about 3.652 x 10(18) cm(-3) and 26.32 cm(2)/Vs, respectively.
- ISSN号：0957-4522
- 是否译文：否
- 发表时间：2017-10-01
- 合写作者：管浩,王威
- 通讯作者：沈鸿烈
- 发表时间：2017-10-01
