Fast growth of conductive amorphous carbon films by HFCVD with filament temperature control
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- 所属单位：材料科学与技术学院
- 发表刊物：MATERIALS LETTERS
- 关键字：Amorphous carbon films Chemical vapor deposition Filament temperature Electrical properties
- 摘要：Amorphous carbon (a-C) films were synthesized on quartz substrates through a hot-filament chemical vapor deposition (HFCVD) method. Effect of filament temperature on the thickness, structural, morphological and electrical properties of a-C films was investigated. Both the crystalline quality and sp(2) content of a-C films increased by raising the filament temperature from 1800 degrees C to 2000 degrees C. Sharp increase of the surface roughness was observed as the filament temperature increased from 2000 degrees C to 2100 degrees C. The a-C films deposited at the filament temperature of 2000 degrees C with a high growth rate of 35 nm/min exhibited the optimal quality with a small roughness of 0.546 nm and a low resistivity of 1.67 x 10(-2) Omega.cm. These results indicated that HFCVD is a good method to prepare conductive a-C films rapidly and effectively. (C) 2018 Elsevier B.V. All rights reserved.
- ISSN号：0167-577X
- 是否译文：否
- 发表时间：2018-10-01
- 合写作者：翟子豪,陈洁仪
- 通讯作者：沈鸿烈
- 发表时间：2018-10-01
