Affiliation of Author(s):材料科学与技术学院

Journal:Phys. Status Solidi A Appl. Mater. Sci.

Abstract:H2O2 is predominantly used as an oxidizer in traditional metal assisted chemical etching (MACE), showing a high consumption rate due to its instability at room temperature. In this work, low concentration HNO3 instead of H2O2 is investigated in Ag-assisted chemical etching process for multicrystalline silicon (mc-Si) wafer. In comparative experiments, black silicon wafers with a surface reflection of 6.46% are obtained using HNO3 with only 5% molar concentration quantity of H2O2. After a post nanostructure rebuilding treatment, nano-scale inverted pyramid-like structures are obtained. SEM images reveal that increase in HNO3 concentration lead to an increase in surface roughness with enlarged structure size. Furthermore, a linear increase in etching rate is observed when AgNO3 concentration raised from 0 to 0.8 × 10−3m. The activation energy of 95.4 eV for the HNO3/HF-Si reaction catalyzed by Ag is obtained by Arrhenius equation. The outcomes demonstrate HNO3 as a potential alternative to conventional oxidizer H2O2 in traditional MACE process. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

ISSN No.:1862-6300

Translation or Not:no

Date of Publication:2019-02-20

Co-author:Yang, Wangyang,Jiang, Ye,jz,tangquntao,Raza, Adil,Gao, Kai

Correspondence Author:Yang, Wangyang,shl