Affiliation of Author(s):材料科学与技术学院

Journal:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Key Words:DIAMOND-LIKE CARBON ELECTRICAL-PROPERTIES GAS-PRESSURE THIN-FILMS SUBSTRATE GROWTH CVD TEMPERATURE GRAPHENE VOLTAGE

Abstract:Deposition pressure is an important factor for the preparation of amorphous carbon (a-C) films through vacuum method. However, researches about the properties, especially optical and electrical properties of a-C films influenced by deposition pressure are still rare. In this work, hot-filament chemical vapor deposition (HFCVD) was used to deposit conductive a-C films under different deposition pressure conditions. As deposition pressure raised from 5 to 160Pa, a structural transition from a-C to nanocrystalline graphite that led to the increase of cluster size, sp(2) content and crystalline quality of a-C films was observed. The hybrid structure composed of amorphous and nanocrystalline phases was also revealed by high-resolution transmittance electron microscope. The mobility, transmittance and conductivity of films increased while the optical gap and carrier concentration decreased by elevating the deposition pressure. As a result, a-C films prepared at 160Pa showed the best property with a roughness of 0.412nm, a transmittance of 67%, an optical bandgap of 1.25eV, a resistivity of 75m and a mobility of 3.17cm(2) V-1 s(-1), which is comparable to those prepared through other methods. The small roughness, good transmittance and low resistivity implied that high quality a-C films can be prepared through HFCVD method by adjusting the deposition pressure.

ISSN No.:0957-4522

Translation or Not:no

Date of Publication:2019-06-01

Co-author:Zhai, Zihao,Chen, Jieyi,F70206594

Correspondence Author:shl