沈鸿烈
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The Influence of Mg Doping Amount on the Property of Zn1-xMgxO Buffer Layer and Its Application in Cu(In,Ga)Se2 Solar Cells
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Affiliation of Author(s):材料科学与技术学院

Journal:Guangzi Xuebao

Abstract:Zn1-xMgxO thin films have been prepared by sol-gel spin-coating technique instead of the CdS buffer layers synthesized by conventional chemical bath deposition for Cu(In,Ga)Se2 (CIGS) solar cells. The effects of Mg doping amount on the structural, morphological, optical properties of Zn1-xMgxO films and band alignment of Zn1-xMgxO/CIGS are investigated by X-ray diffraction, Atmoic force microscope, UV-vis-NIR spectroscopy and X-ray photoelectron spectroscopy. The results show that these properties changed with the increase of Mg. All the films are amorphous. The surface morphology changes from stripe to hexagon nanoparticles and the surface roughness decreases from 23.53 nm to 1.14 nm. The optical band gap increases from 3.55 eV to 3.62 eV and conduction band offsets changes from +0.68 eV to -0.33 eV. Accordingly, the band alignment of Zn1-xMgxO/CIGS changes from "spike-like" to "cliff-like". An efficiency of up to 5.83% is achieved for a CIGS solar cell with a Zn1-xMgxO (using a molar ratio 0.1 of the Mg source and the Zn source in the precusor solution) buffer layer, which is attributed to the optimized conduction band offset of +0.22 eV at the Zn1-xMgxO/CIGS interface. © 2018, Science Press. All right reserved.

ISSN No.:1004-4213

Translation or Not:no

Date of Publication:2018-08-01

Co-author:Wu, Wen-Wen,Chen, Jie-Yi,Shang, Hui-Rong,Sun, Luan-Hong,Gao, Kai,Lily

Correspondence Author:shl

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Researcher
Supervisor of Doctorate Candidates

Main positions:江苏省真空学会常务理事-江苏省光伏科学与工程协同创新中心副理事长-南京市可再生能源学会副理事长

Other Post:亚太材料科学院院士 (2013年10月)

Gender:Male

Alma Mater:中国科学院上海冶金研究所

Education Level:With Certificate of Graduation for Doctorate Study

Degree:Doctoral Degree in Science

School/Department:College of Material Science and Technology

Discipline:Material Science. Physics

Business Address:南京航空航天大学将军路校区西区材料学院大楼D10-B317

Contact Information:18913854729

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