Affiliation of Author(s):材料科学与技术学院

Journal:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Key Words:CU(IN,GA)SE-2 SOLAR-CELLS PHOTOVOLTAIC DEVICES HIGH-EFFICIENCY CUINSE2 ELECTRODEPOSITION NANOPARTICLES TEMPERATURE PERFORMANCE CUGASE2 LAYERS

Abstract:Two-step process is considered to be more simple than co-evaporation method in Cu(InGa)Se-2 (CIGS) thin films preparation process. However, research on CIGS thin films prepared by two-step process based on evaporation of elemental metals Cu, In and Ga is hardly reported. In this work, four types of metal stacks engineered as In/Ga/Cu/Ga/In (type A), Cu/Ga/In (type B), Cu/In/Ga (type C) and Cu/Ga/In/Cu (type D) were prepared and effects of metal stack precursors on properties of CIGS thin films formed by two-step process were studied. All types of precursors consisted of Cu-In, Cu-Ga and In phases. CIGS thin film from type A precursor showed poor compactness and relative high surface roughness due to the ordered defect compounds on the surface. Type B precursor exhibited a better compactness and crystal quality which led to an optimal structural property of films among all types of CIGS thin films. The reduction of Ga/(Ga+In) and the gaps appeared at the Mo/CIGS interface of CIGS thin film from type C precursor were explained by the re-evaporation of Ga element and compensation of In element during selenization. Grain size in CIGS thin film from type D is a little smaller than that from type B. Models of selenization process in different types of precursors were given. CIGS solar cell from type B exhibited the highest conversion efficiency of 9.2%.

ISSN No.:0957-4522

Translation or Not:no

Date of Publication:2018-12-01

Co-author:陈洁仪,翟子豪,Lily

Correspondence Author:shl