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Fabrication of Cu2ZnSnS4 thin films by simple solution method using citric acid as complexing agent
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Affiliation of Author(s):材料科学与技术学院

Journal:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Key Words:IONIC LAYER ADSORPTION SOLAR-CELL SULFURIZATION TEMPERATURE PRECURSORS

Abstract:Cu2ZnSnS4 (CZTS) films were prepared by sulfurizing Cu-Zn-Sn precursor deposited via a simple solution method using environment-friendly citric acid as complexing agent. A single Cu2ZnSnS4 thin film was obtained at 500 A degrees C under a mixed N-2 + H2S (5%) atmosphere. The effects of sulfurization temperature on structural, morphological and optical properties were studied. The results showed that the CZTS thin film annealed at 500 A degrees C exhibited large agglomeration of grains, ideal band gap (E (g) = 1.49 eV) and high optical absorption coefficient (> 10(4) cm(-1)). The resulted carrier concentration and mobility were about 3.652 x 10(18) cm(-3) and 26.32 cm(2)/Vs, respectively.

ISSN No.:0957-4522

Translation or Not:no

Date of Publication:2017-10-01

Co-author:管浩,Michael

Correspondence Author:shl

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Researcher
Supervisor of Doctorate Candidates

Main positions:江苏省真空学会常务理事-江苏省光伏科学与工程协同创新中心副理事长-南京市可再生能源学会副理事长

Other Post:亚太材料科学院院士 (2013年10月)

Gender:Male

Alma Mater:中国科学院上海冶金研究所

Education Level:With Certificate of Graduation for Doctorate Study

Degree:Doctoral Degree in Science

School/Department:College of Material Science and Technology

Discipline:Material Science. Physics

Business Address:南京航空航天大学将军路校区西区材料学院大楼D10-B317

Contact Information:18913854729

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