Affiliation of Author(s):材料科学与技术学院

Journal:APPLIED SURFACE SCIENCE

Key Words:CIGS thin film Sb doping CIGS/CdS interface CIGS solar cell

Abstract:To investigate the effects of Sb doping on the structural and electrical properties of Cu(InGa)Se-2 (CIGS) thin films and solar cells, CIGS thin films, prepared by e-beam evaporation on soda-lime glass, were doped with lower and upper Sb layers in the precursor stacks respectively. Change of structure and introduction of stress were observed in the CIGS thin films with upper Sb layer in stack through XRD and Raman measurement. Both crystalline quality and compactness of CIGS thin films were improved by the doping of upper Sb layer in stack and the CIGS thin film showed an optimal structural property with 20 nm Sb layer. Movement of Fermi level of the surface of CIGS thin film after doping of upper Sb layer in stack and electrons transfer between Cu/Cu+ redox couple and CIGS thin films, which provided probability for the substitution of Sb for Cu sites at the surface of CIGS thin films, were proposed to explain the migration of Cu from the surface to the bulk of CIGS thin films. The larger barrier at the CIGS/CdS interface after doping of upper Sb layer in stack made contribution to the increase of Voc of CIGS solar cells. The efficiency of CIGS solar cell was improved from 3.3% to 7.2% after doping with 20 nm upper Sb. Compared to the CIGS solar cell with lower Sb layer in stack, in which an additional Cu2-x,Se phase was found, the CIGS solar cell with upper Sb layer in stack possessed a higher efficiency. (C) 2017 Elsevier B.V. All rights reserved.

ISSN No.:0169-4332

Translation or Not:no

Date of Publication:2018-03-01

Co-author:陈洁仪,翟子豪,Lily,衣云鸽

Correspondence Author:shl