Analysis the Reverse Conduction Characteristic and Influence of Anti-parallel SiC SBD of eGaN HEMT
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所属单位:自动化学院
发表刊物:International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
是否译文:否
发表时间:2019-08-01
合写作者:彭子和
通讯作者:秦海鸿