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所属单位：自动化学院
发表刊物：PCIM Eur. Conf. Proc.
摘要：This paper investigates the characteristics of SiC MOSFET and Si IGBT hybrid switch. Based on the characteristics comparison of SiC MOSFET and Si IGBT, the optimized switching patterns of hybrid switch is proposed. The current sharing inside the hybrid switches is analyzed in steady state conditions by modelling.The switching process of hybrid switch is analyzed and verified by double pulse test. The experimental results show that the optimized hybrid switch can expand the capacity of SiC MOSFET and reduce the switching loss of Si IGBT. © VDE VERLAG GMBH.
是否译文：否
发表时间：2018-01-01
合写作者：Xiu, Qiang,Wang, Dan,王世山,Zhao, Chaohui
通讯作者：秦海鸿