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所属单位：自动化学院
发表刊物：PROCEEDINGS OF THE 2017 12TH IEEE CONFERENCE ON INDUSTRIAL ELECTRONICS AND APPLICATIONS (ICIEA)
关键字：Silicon carbide MOSFET Parallel Circuit Mismatch
摘要：Current sharing is a major problem for paralleling devices, which can affect the performance and reliability of devices. In this paper, the factors leading to current unbalance in paralleling silicon carbide (SiC) MOSFETs are analyzed, especially the circuit mismatch. A double pulse test circuit based on SiC MOSFET is established for testing the circuit mismatch including common source stray inductance (L-S), switching loop stray inductance (L-D) and the gate driver resistance (R-G). The experimental results verify the influences caused by circuit mismatch on the current sharing in paralleling devices.
ISSN号：2156-2318
是否译文：否
发表时间：2017-01-01
合写作者：张颖,Zhu Ziyue,F70206579,付大丰,王世山,Zhao Chaohui
通讯作者：秦海鸿