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所属单位：理学院

发表刊物：17TH IUMRS INTERNATIONAL CONFERENCE IN ASIA (IUMRS-ICA 2016)

关键字：Graphene Oxygen plasma etching

摘要：This paper reports a study of the effect of oxygen plasma etching on the mechanical and electrical properties of chemical vapor deposited (CVD) multilayer graphene. By means of scan probe microscopy (SPM), it was found that the defects were initially induced to the top graphene layer by oxygen plasma etching, which plays an incentive role in further etching. Oxygen plasma bombarding on surface of graphene enhanced the surface roughness, as well changed the tribological properties. The results of electronic transport measurements show a decrease in mobility with the increase of etching duration. These findings are valuable for studying the effects of plasma etching on graphene, and modifying the physical properties of graphene through artificially generated defects.

ISSN号：1757-8981

是否译文：否

发表时间：2017-01-01

合写作者：Jia, Pengfei,Chen, Tianhang

通讯作者：潘风明